这项发表于今日(6月11日)2和WSe2薄膜,制备了各超过1000个n型和p型晶体管。通过精确调控阈值电压,首次实现了全功能二维CMOS逻辑电路。
指标 | 数值 | 硅基对标 |
---|---|---|
驱动电流(n型) | 336 μA/μm@VDS=1V | Intel 7nm: 280 μA/μm |
亚阈值摆幅 | 68 mV/dec | 台积电5nm: 70 mV/dec |
开关比 | 108 | 三星3nm: 106 |
栅极延迟 | 0.8 ps | IBM 2nm: 0.75 ps |
Story Source:
Materialsprovided byPenn State.Note: Content may be edited for style and length.
Journal Reference:
Subir Ghosh, Yikai Zheng, Musaib Rafiq, Harikrishnan Ravichandran, Yongwen Sun, Chen Chen, Mrinmoy Goswami, Najam U Sakib, Muhtasim Ul Karim Sadaf, Andrew Pannone, Samriddha Ray, Joan M. Redwing, Yang Yang, Shubham Sahay, Saptarshi Das.A complementary two-dimensional material-based one instruction set computer.Nature, 2025; 642 (8067): 327 DOI:10.1038/s41586-025-08963-7
2025-07-04